Abstract:
The 2D materials like Graphene and MoS2 are widely studied over the last decade due to their unique structural, mechanical, electrical and optical properties for nanoelectronics device applications. There are many other materials from 2D family possess similar properties as that of MoS2 but are less explored by the researchers. In the present thesis, various 2D materials such as V2O5, Black Phosphorous, SnSe2, PtSe2 and CdMoS4 are synthesized using top down and bottom up approaches. The structural, morphological and optical investigations were carried out using microscopic and spectroscopic techniques. Based on the characterization analysis these materials are utilized for fabricating nanoelectronic devices including Field Effect Transistor, photodetector, humidity sensor and gas sensor. Our results reveals that these 2D materials can be potential candidate in next generation nanoelectronic devices.
